Apparatus for fabricating semiconductor device and fabrication method therefor
US6277657A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 8, 2000 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | May 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A crystal growing apparatus comprises a vacuum vessel, a heating lamp, a lamp controller for controlling the heating lamp, a gas inlet port, a flow rate adjuster for adjusting the flow rate of a gas, a pyrometer for measuring the temperature of a substrate, and a gas supply unit for supplying a Si.sub.2 H.sub.6 gas or the like to the vacuum vessel. An apparatus for ellipsometric measurement comprises: a light source, a polariscope, a modulator, an analyzer, a spectroscope/detector unit, and an analysis control unit for calculating .PSI., .DELTA.. In removing a chemical oxide film on the substrate therefrom, in-situ ellipsometric measurement allows a discrimination between a phase 1 during which a surface of the substrate is covered with the oxide film and a phase 2 during which the surface of the substrate is partially exposed so that the supply of gas suitable for the individual phases is performed and halted.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.