Method for fabricating solar cells
US6277667A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 7, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Sep 7, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
Abstract
This invention discloses a novel method for fabricating solar cells. Using the existing screen-printing, masking or photolithography techniques, a P-type or N-type diffusion source is coated on the sites of an N-type or P-type silicon wafer desired for forming electrodes. Then, a low dose P-type or N-type diffusion source is in situ diffused into the N-type or P-type silicon wafer together with the P-type or N-type diffusion source coated on the N-type or P-type silicon wafer in the furnace. Thereafter, a P.sup.- /P.sup.+ or N.sup.- /N.sup.+ diffusion region is formed within the N-type or P-type silicon wafer. Finally, electrodes aligned to the P.sup.+ or N.sup.+ diffusion region are formed by means of screen-printing. Then, a solar cell with high photocurrent and low series resistance can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.