Method and planarizing polysilicon layer
US6277741A · kind A · utility
0Cited by
6References
11Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 29, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Mar 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32115
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for planarizing a polysilicon layer is described. A polysilicon layer is etched with an oxygen-based gas and a halogen-based gas. The oxygen-based gas comprises an nitrogen oxide oxygen gas. The nitrogen oxide gas includes NO, NO.sub.2, N.sub.2 O, or the combination thereof. The halogen-based gas includes a F, Cl, Br., I, NF.sub.3, SF.sub.6, Cl.sub.2, HCl, SiCl.sub.4, fluorocarbon, or a combination thereof. The fluorocarbon includes CF.sub.4, CHF.sub.3, CH.sub.2 F.sub.2, CH.sub.3 F, or the like.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.