Plasma processing of tungsten using a gas mixture comprising a fluorinated gas and oxygen
US6277763A · kind A · utility
244Cited by
3References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Dec 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for etching of a substrate comprising both a polysilicon layer and an overlying tungsten layer. The method comprises etching the tungsten layer in a chamber using a plasma formed from a gas mixture comprising a fluorinated gas (such as CF.sub.4, NF.sub.3, SF.sub.6, and the like) and oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.