Patent · US Expired

Thermoelectric devices and methods for making the same

US6278049A · kind A · utility

16Cited by
39References
35Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 5, 2000
Grant dateAug 21, 2001
Priority date
Expiry dateApr 5, 2020

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/09701
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Thermoelectric devices having enhanced thermal characteristics are fabricated using multilayer ceramic (MLC) technology methods. Aluminum nitride faceplates with embedded electrical connections provide the electrical series configuration for alternating dissimilar semiconducting materials. Embedded electrical connections are formed by vias and lines in the faceplate. A portion of the dissimilar materials are then melted within the tunnels to form a bond. Thermal conductivity of the faceplate is enhanced by adding electrically isolated vias to one surface, filled with high thermal conductivity metal paste. A low thermal conductivity material is also introduced between the two high thermal conductivity material faceplates. Alternating semiconducting materials are introduced within the varying thermal conductivity layers by punching vias within greensheets of predetermined thermal conductivity and filling with n-type and p-type paste or may also be patterned in linear or radial fanout patterns through screening techniques and lamination of wire structures. a liquid channel within the faceplate is used to enhance thermal energy transfer. Thermoelectric devices are physically incorporat…

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.