Field effect transistor of SiC for high temperature application, use of such a transistor and a method for production thereof

US6278133A · kind A · utility

Assignee

• Acreo AB · SE

Inventors

• Christopher Harris · Sollentuna, SE
• Andrei Konstantinov · Linköping, SE
• Susan Savage · Jokkmokk, SE

Key dates

• Filing date: Apr 23, 1999
• Grant date: Aug 21, 2001
• Expiry date: Apr 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/106
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

A field effect transistor of SiC for high temperature application has the source region layer (4), the drain region layer (5) and the channel region layer (6, 7) vertically separated from a front surface (14), where a gate electrode (12) is arranged, for reducing the electric field at said surface in operation of the transistor and in the case of operation as a gas sensor permitting all electrodes except for the gate electrode to be protected from the atmosphere.