Semiconductor sensor with a base element and at least one deformation element

US6278167A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Thomas Bever · Munich, DE
• Stephan Schmitt · Munich, DE
• Gunter Ehrler · Holzkirchen, DE

Key dates

• Filing date: Mar 20, 2000
• Grant date: Aug 21, 2001
• Expiry date: Mar 20, 2020

Classification

• Technology area (CPC G): Physics
• CPC primary: G01L9/0054
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The invention relates to a semiconductor sensor having a base element (4) and at least one deformation element (8). The deformation element (8) is composed of a semiconductor substrate that is doped with a dopant of a first conductivity type. Piezoresistors (14) that are doped with a dopant of the opposite conductivity type are located in the deformation element (8). The deformation element (8) has at least one part that is in contact with a medium. The semiconductor sensor is characterized in that the part has a lower concentration of the dopant than a further region located between it and the piezoresistor (14).