Method and apparatus for electroplating films on semiconductor wafers
US6280581A · kind A · utility
Inventor
Key dates
| Filing date | Dec 29, 1998 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Dec 29, 2018 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC25D7/123
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An electroplating apparatus includes a cathode structure, an anode structure, a power supply, and a pressurized electrolyte source. The cathode structure is configured to engage a perimeter portion of a workpiece such as a semiconductor wafer, and the anode structure includes an outlet. The power supply is coupled between the cathode structure and the anode structure. The pressurized electrolyte source is coupled to the anode structure to provide an electrically continuous fluid jet of an electrolyte from the outlet to be directed to a surface of the workpiece that is to be electroplated. A method for electroplating a workpiece includes electrically engaging a perimeter portion of the workpiece with a cathode structure, and directing an electrically continuous fluid jet of electrolyte having positively charged ions towards a surface of the workpiece that is to be electroplated. Preferably, there is a mechanism for providing relative motion between the workpiece and the jet of electrolytes, such as a mechanism for moving the electrically continuous fluid jet of electrolyte to a number of radial positions as the workpiece is rotated around an axis of rotation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.