Sputtering apparatus for filling pores of a circular substrate
US6280585A · kind A · utility
56Cited by
6References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 1997 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Nov 3, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A sputtering apparatus in which the distance between a target and a substrate is made to be at least greater than the diameter of the circular substrate wafer and an internal gas pressure level of a vacuum chamber is held to be not higher than 1.times.10.sup.-1 Pa during sputtering process, thereby capable of effectively filling pores provided on the substrate without generating dust and void spaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.