Post-development resist hardening by vapor silylation
US6280908A · kind A · utility
8Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Apr 15, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/405
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of improving the etch resistance of a patterned imageable resist prior to patterning an underlying substrate layer is provided. Specifically, the method employed by the present invention comprises applying a layer of an imageable resist to a substrate layer; patterning the layer of imageable resist by removing selective areas thereof; and treating the patterned imageable resist with an atmosphere comprising molecules of a hardening agent so as to obtain a hardened resist surface which etches at a slower rate than that of the untreated resist.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.