Multi-phase lead germanate film deposition method
US6281022A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2000 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Nov 1, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOCVD deposition process has been provided for the deposition of an improved PGO ferroelectric film. The inclusion of a second phase of Pb.sub.3 GeO.sub.5, along with the first phase of Pb.sub.5 Ge.sub.3 O.sub.11, provides the film with some ferroelastic properties which direct correspond to improved ferroelectric characteristics. The inclusion of the second phase regulates to first phase crystal grain size and promotes the preferred c-axis orientation of the grains. The degree of second phase Pb.sub.3 GeO.sub.5 is regulated by controlling the amount of lead in the precursor, and with additional lead added to the reactor along the oxygen used to oxidize the lead-germanium film. Critical post-deposition annealing process are also described which optimize the ferroelectric properties of the PGO film. A multi-phase PGO film and capacitor structure including multi-phase PGO film of the present invention are provided by means of the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.