Method of manufacturing a capacitor in a memory device
US6281066A · kind A · utility
2Cited by
15References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 20, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Dec 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of manufacturing a capacitor of a semiconductor device by which a CVD TiN film and a MOCVD TiN film, and a polysilicon film are sequentially stacked in forming an electrode on a Ta.sub.2 O.sub.5 dielectric thin film. Therefore, it can prevent changes in thickness of the effective oxide film of the Ta.sub.2 O.sub.5 capacitor against the characteristics of each of the CVD TiN film and the MOCVD TiN film, even after a rapid thermal process. It can also improve the step coverage, thus greatly improving the stability and reliability of the capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.