Process for Polycrystalline film silicon growth
US6281098A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Jun 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28525
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for depositing polycrystalline silicon on substrates, including foreign substrates, occurs in a chamber at about atmospheric pressure, wherein a temperature gradient is formed, and both the atmospheric pressure and the temperature gradient are maintained throughout the process. Formation of a vapor barrier within the chamber that precludes exit of the constituent chemicals, which include silicon, iodine, silicon diiodide, and silicon tetraiodide. The deposition occurs beneath the vapor barrier. One embodiment of the process also includes the use of a blanketing gas that precludes the entrance of oxygen or other impurities. The process is capable of repetition without the need to reset the deposition zone conditions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.