LPNP utilizing base ballast resistor
US6281530A · kind A · utility
3Cited by
3References
7Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/401
Abstract
A lateral PNP transistor (LPNP) (102) having the low resistance base buried N+ region (114) removed from below the emitter region (118). This leaves a high resistance n-well (116) below the emitter. The resistance from the center of the emitter region (118) to the N+ buried region (114) is greater than the resistance at the periphery of the emitter region (118) to the N+ buried region (114). Debiasing will occur in the center of the emitter region (118) where the parasitic base current is generated. Thus, the ratio of parasitic current to active collector current and peak beta will improve.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.