Technique to obtain increased channel mobilities in NMOS transistors by gate electrode engineering
US6281532A · kind A · utility
250Cited by
4References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Jun 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of modifying the mobility of a transistor. First, a transistor having a gate is formed. A substance is then implanted in the gate. The transistor is annealed such that the implanted substance forms at least one void in the transistor's gate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.