Unique chemical mechanical planarization approach which utilizes magnetic slurry for polish and magnetic fields for process control
US6284091A · kind A · utility
7Cited by
7References
24Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 13, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Jul 13, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The present invention is an improved apparatus and process for chemical mechanical polishing (CMP) layers which have a low dielectric constant (k). The present invention uses a magnetic slurry and a magnetic coil for polishing the wafer with the magnetic slurry. By using a magnetic slurry and a magnetic coil the force used during polishing can be controlled resulting greater control over the CMP process during the polishing of low k materials.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.