Sputtering target free of surface-deformed layers
US6284111A · kind A · utility
7Cited by
10References
1Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Dec 13, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering target is provided which provides early stabilization of the film-deposition rate of the sputtering target from its initial stage of use. The sputtering target surface subjected to erosion is formed with a surface-deformed layer. The surface-deformed layer is reduced by precision machining and removed by etching. The extent of etching is controlled so that the surface roughness (Ra) is in a range between 0.1% and 10% of the mean crystal grain diameter of the material constituting the target. The surface roughness (Ra) is defined as the mean roughness on the center line of the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.