Method of manufacturing a flash memory cell having inter-poly-dielectric isolation

US6284598A · kind A · utility

Assignee

• Agere Systems Guardian Corporation · US

Inventors

• Patrick J. Kelley · Orlando, US
• Ranbir Singh · Cary, US
• Larry Bruce Fritzinger · Orlando, US
• Cynthia C. Lee · Fogelsville, US
• John Simon Molloy · Orlando, US

Key dates

• Filing date: Nov 23, 1999
• Grant date: Sep 4, 2001
• Expiry date: Nov 23, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B69/00

Abstract

A method of forming round corners for a gate oxide between a floating gate and a control gate of a memory cell comprises the steps of forming the floating gate over a tunnel oxide; forming a mask over the floating gate; forming rounded end caps adjacent distal ends of the mask; transferring the rounding of the end caps to top corners of the floating gate; forming the gate oxide over the floating gate; and, forming the control gate over the gate oxide. A memory cell having a rounded corner interface between the floating gate and control gate is also provided.