Method for forming a structured metallization on a semiconductor wafer

US6284639A · kind A · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Rolf Aschenbrenner · Berlin, DE
• Ghassem Azdasht · Berlin, DE
• Elke Zakel · Falkensee, DE
• Andreas Ostmann · Berlin, DE
• Gerald Motulla · Berlin, DE

Key dates

• Filing date: Oct 25, 1999
• Grant date: Sep 4, 2001
• Expiry date: Oct 25, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/14
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to a method of forming a structured metallization on a semiconductor wafer, wherein a main surface of the wafer has a passivation layer applied thereto, which is structured so as to determine at least one bond pad. Initially, a metal bump is produced on the at least one bond pad. An activated dielectric is then produced on the areas of the passivation layer on which the structured metallization is to be formed. Finally, metal is chemically deposited directly on the activated dielectric and on the metal bump in such a way that the structured metallization formed on the activated dielectric and the metal chemically deposited on the metal bump are electro-conductively joined.