Method of forming a cobalt silicide layer by use of a TEOS through oxide film for ion-implantation process
US6284662A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 28, 1999 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Sep 28, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a cobalt silicide layer on a silicon region comprises the steps of: forming a TEOS oxide film on a surface of the silicon region; carrying out an ion-implantation process for implanting ions through the TEOS oxide film into the silicon region; carrying out a heat treatment to activate the ions implanted in the silicon region, whereby a silicidation reaction inhibitor layer concurrently formed on an interface between the TEOS oxide film and the surface of the silicon region; carrying out a dry etching to remove laminations of the TEOS oxide film and the silicidation reaction inhibitor layer from the surface of the silicon region; carrying out a cleaning process for cleaning the surface of the silicon region by subjecting the surface of the silicon region to an acidic solution and subsequently to a diluted hydrofluoric acid solution; and forming a cobalt silicide layer on the surface of the silicon region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.