Power transistor with silicided gate and contacts

US6284669A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• John P. Erdeljac · Plano, US
• Louis N. Hutter · Richardson, US
• Jeffrey P. Smith · San Diego, US
• Han-Tzong Yuan · Dallas, US
• Jau-Yuann Yang · Richardson, US
• Taylor R. Efland · Richardson, US
• C. Matthew Thompson · Meadowlark Drive, US
• John Kenneth Arch · Richardson, US
• Mary Ann Murphy · Richardson, US

Key dates

• Filing date: Oct 7, 1998
• Grant date: Sep 4, 2001
• Expiry date: Oct 7, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62

Abstract

A power field effect transistor is disclosed that includes polysilicon gate bodies (40) and (42), which includes platinum silicide contact layers (74) and (78) disposed on the outer surfaces of bodies (40) and (42), respectively. In addition, the device comprises an n+drain region (64) which also has a platinum silicide drain contact layer (76) formed on its outer surface and platinum silicide source contact layers (75) and (77). During formation, sidewall spacers (50) and (52), as well as mask bodies (70) and (72) are used to ensure that platinum silicide layer (76) spaced apart from both gate bodies (40) and (42) and platinum silicide gate contact layers (74) and (78).