Method of forming fluorosilicate glass (FSG) layers with moisture-resistant capability
US6284677A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 5, 1997 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Jun 5, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming fluorosilicate glass (FSG) layers that serve as inter-metal dielectric (IMD) layers in a semiconductor wafer with a high moisture-resistant capability. In particular, the method can nonetheless allow the resultant semiconductor circuit to have a low RC delay. The method includes the step of subjecting the FSG layer to a plasma treatment so as to form a moisture-resistant layer over the FSG layer. In the plasma treatment, the ionized gas of ammonia is used as the plasma. As a result of this plasma treatment, a layer of nitrogen-containing compound having a high moisture-resistant property is formed over the FSG layer, which serves as a moisture-resistant layer that can protect the FSG layer from absorbing moistures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.