Semiconductor device having a fuse
US6285540A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2000 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Apr 28, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a fuse of a semiconductor device and a method of forming a fuse of a semiconductor device. The method of the invention includes forming an underlying metal conductor on a semiconductor substrate, forming an insulating film over the underlying metal conductor, and selectively etching regions of the insulating film. One of the regions of the insulating film is etched to form a via contact region exposing the underlying metal conductor. A second region is etched to form a groove in the insulating film for the fuse metal. Metal is buried within the second etched region of the insulating film and the via contact region to respectively form a fuse metal pattern and a via contact metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.