Semiconductor laser component

US6285697A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gottfried Landwehr · Würzburg, DE
• Markus Keim · Ansbach, DE
• Günter Reuscher · Würzburg, DE
• Thomas Litz · Würzburg, DE
• Thierry Baron · Pessac, FR
• Frank Fischer · Mesa, US
• Hans-Jürgen Lugauer · Sinzing, DE

Key dates

• Filing date: Aug 2, 1999
• Grant date: Sep 4, 2001
• Expiry date: Aug 2, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3095
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

A semiconductor laser component includes a semiconductor body with an SCH configuration which is suitable for generating an electromagnetic radiation and in which an active layer sequence with a quantum well structure is provided between a first outer cover layer of a first conductivity type and a second outer cover layer of the first conductivity type. A first denatured transition layer of a second conductivity type and a second denatured transition layer the first conductivity type are provided between the active layer sequence and the second outer cover layer.