System and method for detecting CMP endpoint via direct chemical monitoring of reactions
US6287171A · kind A · utility
5Cited by
9References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 15, 2000 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Feb 15, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B49/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A system and method for detecting process endpoint in CMP is presented which monitors the progression of chemical activities that take place from the chemical reaction that occurs at the wafer surface during polishing. In order to monitor the progression of chemical activities taking place from the chemical reaction, a surface plasmon resonance sensor acts as a conducting surface which supports surface plasmon resonance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.