Generic process for preparing a crystalline oxide upon a group IV semiconductor substrate and a crystalline oxide-on-semiconductor structure
US6287710A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 28, 2000 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Aug 28, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12618
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for growing a crystalline oxide epitaxially upon the surface of a Group IV semiconductor, as well as a structure constructed by the process, is described. The semiconductor can be germanium or silicon, and the crystalline oxide can generally be represented by the formula (AO).sub.n (A'BO.sub.3).sub.m in which "n" and "m" are non-negative integer repeats of planes of the alkaline earth oxides or the alkaline earth-containing perovskite oxides. With atomic level control of interfacial thermodynamics in a multicomponent semiconductor/oxide system, a highly perfect interface between a semiconductor and a crystalline oxide can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.