Method for manufacturing semiconductor dynamic quantity sensor
US6287885A · kind A · utility
56Cited by
26References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 6, 1999 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | May 6, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/084
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
In a method for manufacturing a semiconductor acceleration sensor, a movable portion including a mass portion and movable electrodes is formed in a single crystal silicon thin film provided on a silicon wafer through an insulation film by etching both the single crystal silicon thin film and the silicon wafer. In this case, the movable portion is finally defined at a movable portion defining step that is carried out in a vapor phase atmosphere. Accordingly, the movable portion is prevented from sticking to other regions due to etchant during the manufacture thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.