Sputtering film forming method, sputtering film forming equipment, and semiconductor device manufacturing method
US6287986A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 5, 1999 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Feb 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02266
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided an RF sputtering film forming method of forming a compound film having a stable composition by use of stable plasma with a broad process window to thus facilitate composition control of the compound film. In the RF sputtering film forming method, an alternating voltage or alternating current is applied to a part or all of walls positioned on the outside of a space formed between a wafer and a target, or an electron temperature in the plasma is reduced by oscillating the RF power in a pulse fashion, or a sputtering gas is composed of at least one kind of gases of helium, neon, xenon, and krypton, or a minus voltage is applied to a part or all of the walls positioned on the outside of the space formed between the wafer and the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.