Semiconductor device manufacturing method, semiconductor device manufacturing apparatus and semiconductor device
US6287988A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 17, 1998 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Mar 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device, which comprises a step of forming an oxide film by oxidizing a surface of semiconductor layer in an atmosphere containing an oxygen-activated species at a temperature of over 550.degree. C. A method of manufacturing a semiconductor device, which comprises the steps of forming an oxide film by oxidizing a surface of semiconductor in an atmosphere containing an oxygen-activated species, and removing the oxide film so as to expose a surface of the semiconductor. A method of manufacturing a semiconductor device which comprises a step of feeding an oxidizing source gas comprising as a main component oxygen atomic radicals of singlet state in an excited state to a silicon layer thereby to oxidize a surface of the silicon layer, thus forming a silicon oxide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.