Method of treating a semiconductor wafer in a chamber using hydrogen peroxide and silicon containing gas or vapor
US6287989A · kind A · utility
29Cited by
14References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 19, 1998 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Oct 19, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/935
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic fluid polymer on the wafer, which thus forms a generally planar layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.