Ion milling planarization of semiconductor workpieces
US6288357A · kind A · utility
24Cited by
5References
13Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 10, 2000 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Feb 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/316
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method and apparatus is presented for planarizing or polishing workpiece surfaces using an ion beam in the presence of a radio frequency generated plasma. A workpiece is placed in a holder within a vacuum chamber equipped with a radio frequency inductive plasma generator. The workpiece surface is exposed to a source of energetic ions, the chamber is filled with gas, and the gas is ionized with radio frequency energy to form inductive plasma that surrounds the workpiece. An ion beam mounted above the workpiece scans the workpiece surface with sufficient energy to remove micro irregularities from the workpiece surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.