Sputter deposition utilizing pulsed cathode and substrate bias power
US6290821A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 23, 2000 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Mar 23, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/568
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for depositing on a substrate surface a thin film layer comprising a target material comprises providing a cathode including a target having a sputtering surface comprised of the target material, with the target sputtering surface facing the substrate surface with a space therebetween, and sputtering the target material onto the substrate surface by applying a plurality of negative voltage pulses to the cathode while simultaneously applying a bias voltage to the substrate. Embodiments include depositing thin film layers onto static or moving substrates and application of constant or time-varying substrate bias voltage. The invention finds particular utility in the formation of high purity layers in the automated manufacture of magnetic data/information storage and retrieval media.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.