Method to form silicates as high dielectric constant materials
US6291283A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 9, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Nov 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An embodiment of the instant invention is a method of forming a semiconductor device situated over a semiconductor substrate, the method comprising the steps of: forming a layer of suboxide material (layer 206 of FIG. 2a) over the substrate (substrate 202 of FIGS. 2a-2c), the suboxide material comprised of a material selected from the group consisting of: HfSiO.sub.x, ZrSiO.sub.x, LaSiO.sub.x, YSiO.sub.x, ScSiO.sub.x, and CeSiO.sub.x ; and forming a structure (layer 210 of FIG. 2c) on the layer of suboxide material. In an alternative embodiment, semiconductor device is a transistor where and the structure formed on the layer of suboxide material is a gate electrode (preferably comprised of: polycrystalline silicon, tungsten, titanium, tungsten nitride, titanium nitride, platinum, aluminum, and any combination thereof). In another alternative embodiment, the semiconductor device is a storage device where a bottom electrode is formed under and abutting the suboxide material which forms the dielectric to the storage device and the structure formed on the layer of suboxide material is the top electrode of the storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.