Inventor · Scottsdale, AZ, US

Glen Wilk

49Patents
20h-index
31Co-inventors
81Inventor score

Filing activity: Jul 31, 1997 → Jul 1, 2011

Most-cited inventions

PatentTitleAreaCited byStatus
US6013553A Zirconium and/or hafnium oxynitride gate dielectric Electricity 808 Expired
US7795160B2 ALD of metal silicate films Electricity 396 Active
US6291282A Method of forming dual metal gate structures or CMOS devices Electricity 324 Expired
US6020243A Zirconium and/or hafnium silicon-oxynitride gate dielectric Electricity 267 Expired
US6291867A Zirconium and/or hafnium silicon-oxynitride gate dielectric Electricity 151 Expired
US6291866A Zirconium and/or hafnium oxynitride gate dielectric Electricity 117 Expired
US6150242A Method of growing crystalline silicon overlayers on thin amorphous silicon oxide layers and forming by method a resonant tunneling diode Electricity 103 Expired
US6544875B1 Chemical vapor deposition of silicate high dielectric constant materials Electricity 70 Expired
US6255150A Use of crystalline SiOx barriers for Si-based resonant tunneling diodes Performing Operations; Transporting 63 Expired
US6770536B2 Process for semiconductor device fabrication in which a insulating layer is formed on a semiconductor substrate Electricity 62 Expired
US8334218B2 Method of forming non-conformal layers Electricity 54 Active
US6495474B1 Method of fabricating a dielectric layer Electricity 49 Expired
US6291283A Method to form silicates as high dielectric constant materials Electricity 36 Expired
US6248621A Method of growing high-quality crystalline silicon quantum wells for RTD structures Emerging Cross-Sectional Technologies 33 Expired
US7608549B2 Method of forming non-conformal layers Electricity 32 Active
US6258637A Method for thin film deposition on single-crystal semiconductor substrates Emerging Cross-Sectional Technologies 31 Expired
US6552388B2 Hafnium nitride gate dielectric Electricity 31 Expired
US6723581B1 Semiconductor device having a high-K gate dielectric and method of manufacture thereof Electricity 29 Expired
US6841439B1 High permittivity silicate gate dielectric Electricity 25 Expired
US6436801B1 Hafnium nitride gate dielectric Electricity 24 Expired
US6020247A Method for thin film deposition on single-crystal semiconductor substrates Emerging Cross-Sectional Technologies 16 Expired
US6797525B2 Fabrication process for a semiconductor device having a metal oxide dielectric material with a high dielectric constant, annealed with a buffered anneal process Electricity 13 Expired
US6245606A Low temperature method for forming a thin, uniform layer of aluminum oxide Electricity 12 Expired
US8268409B2 Plasma-enhanced deposition of metal carbide films Chemistry; Metallurgy 11 Active
US6277681A Process to produce ultrathin crystalline silicon nitride on Si(111) for advanced gate dielectrics Electricity 11 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.