Method of increasing trench density for semiconductor
US6291310A · kind A · utility
20Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/83
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of increasing trench density for semiconductor devices such as, for example, trench MOSFETs. Trenches are formed in a substrate with mesas interposed between the trenches. The initial width of the mesas are made less than target width so that a reduction in trench pitch can be realized. After a silicon layer is grown inside the trenches, the width of the mesas is increased to a final width that is two times the thickness of the silicon layer. The thickness of the silicon layer is precalculated so that it is of sufficient thickness to ensure compliance with the target mesa width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.