Joelle Sharp
9Patents
4h-index
6Co-inventors
46Inventor score
Filing activity: Nov 24, 1999 → Jun 16, 2009
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6291310A | Method of increasing trench density for semiconductor | Electricity | 20 | Expired |
| US7553740B2 | Structure and method for forming a minimum pitch trench-gate FET with heavy body region | Electricity | 15 | Expired |
| US6391699B1 | Method of manufacturing a trench MOSFET using selective growth epitaxy | Electricity | 11 | Expired |
| US6825087B1 | Hydrogen anneal for creating an enhanced trench for trench MOSFETS | Electricity | 8 | Expired |
| US6576954B2 | Trench MOSFET formed using selective epitaxial growth | Electricity | 4 | Expired |
| US8039401B2 | Structure and method for forming hybrid substrate | Electricity | 3 | Active |
| US8237195B2 | Power MOSFET having a strained channel in a semiconductor heterostructure on metal substrate | Electricity | 2 | Active |
| US7564096B2 | Scalable power field effect transistor with improved heavy body structure and method of manufacture | Electricity | 1 | Active |
| US7754567B2 | Scalable power field effect transistor with improved heavy body structure and method of manufacture | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.