Re-deposition high compressive stress PECVD oxide film after IMD CMP process to solve more than 5 metal stack via process IMD crack issue
US6291331A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Oct 4, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/05093
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new method is provided for the creation of layers of dielectric that are used for metal stack interconnect layers where the metal stack exceeds five layers. A stack of five layers of metal interconnect lines contains one layer of Intra Metal dielectric (ILD) and four layers of Inter Metal dielectric (IMD). One or more of the layers of IMD can be formed in the conventional method. One or more of the layers of IMD can be formed in the conventional method after which a layer of high compressive PECVD is deposited over this one or more layers of IMD. The layer of high compressive PECVD provides a crack resistant film that eliminates the formation of cracks in the surface of the IMD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.