Method and apparatus for etching a substrate with reduced microloading
US6291357A · kind A · utility
13Cited by
17References
43Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Oct 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67069
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A substrate 20 is placed in a process zone 115 of a process chamber 110, process gas is introduced into the process zone 115, and an energized gas is formed in the process zone 115. First process conditions are set to form etch-passivating deposits onto a surface 22 of the substrate 20. Second process conditions are set to etch the surface 22 of the substrate 20. The etch-passivating deposits formed before the etching process improve etching uniformity and reduce etch-rate microloading.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.