Method of calibrating an electron beam system for lithography
US6291819A · kind A · utility
11Cited by
9References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 9, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Sep 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3175
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of calibrating an electron beam system in which a plurality of standard grids are mounted in various presentations in the electron beam system and treated as different presentations of the same grid for the purposes of applying algorithms to adjust a computer-controlled system for deflecting the electron beam. A standard grid mask is fabricated in an electron beam system and used in a stepper to make the standard grids, the same stepper and the same stepper optics being used to make each of the standard grids.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.