Semiconductor device with alternating conductivity type layer and method of manufacturing the same
US6291856A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 10, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Nov 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
Abstract
This invention clarifies the effects of parameters and enables the mass production of a super-junction semiconductor device, which has a drift layer composed of a parallel pn layer that conducts electricity in the ON state and is depleted in the OFF state. The quantity of impurities in n drift regions is within the range between 100% and 150% or between 110% and 150% of the quantity of impurities in p partition regions. The impurity density of either one of the n drift regions and the p partition regions is within the range between 92% and 108% of the impurity density of the other regions. In addition, the width of either one of the n drift regions and the p partition regions is within the range between 94% and 106% of the width of the other regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.