Method for the in-writing verification of the threshold value in non-volatile memories
US6292398A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2000 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5621
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for the in-writing verification of the threshold value of the multilevel cells suitable to memorize n bits each, that provides for the utilization of a sense amplifier containing a respective successive approximation register. An output signal of a comparison circuit provides for the loading of the datum to be programmed in the cell being selected, after which a programming pulse is applied and the comparison between the reference current corresponding to said datum and the current that flows in the cell is carried out. The application of the programming pulse and the performance of the comparison are then repeated until it is verified that the current of the cell is smaller than the reference current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.