Distribution plate for a reaction chamber with multiple gas inlets and separate mass flow control loops
US6294026A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Nov 26, 1996 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Nov 26, 2016 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45561
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention is an apparatus for distributing reactant gases across the substrate mounted in a reaction chamber. The apparatus is capable of being utilized in both vapor deposition and etching processes. The apparatus substantially compensates for the problem of non-uniformity of vapor deposition and etching at the edges of the wafers caused by gas depletion. A gas distribution plate having a plurality of apertures extending therethrough is attached to an interior surface of the reaction chamber. At least one vacuum sealed partition is disposed between a surface of the gas distribution plate and the interior surface of the chamber. The partition separates the space between the plate and reaction chamber into gas distribution zones. A gas inlet is connected to each gas distribution zone. Each gas inlet line has at least one mass flow controller which regulates the flow of gas to each gas distribution zone. The mass flow controllers are utilized to ensure a uniform rate of chemical vapor deposition or etching across the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.