Selective dry etch of a dielectric film
US6294102A · kind A · utility
5Cited by
3References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 1999 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | May 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of etching an oxide layer placed over a nitride layer of a substrate with high selectivity. The process comprises plasma etching the oxide layer of the substrate with a carbon and fluorine-containing gas and with a nitrogen-containing gas. A Si.sub.x N.sub.y species is formed which is deposited on the nitride layer substantially in equilibrium with etching of the nitride layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.