Chienfan Yu
27Patents
12h-index
63Co-inventors
84Inventor score
Filing activity: Nov 1, 1991 → Jan 10, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6864041B2 | Gate linewidth tailoring and critical dimension control for sub-100 nm devices using plasma etching | Physics | 512 | Expired |
| US5282925A | Device and method for accurate etching and removal of thin film | Electricity | 125 | Expired |
| US5838055A | Trench sidewall patterned by vapor phase etching | Electricity | 110 | Expired |
| US5766971A | Oxide strip that improves planarity | Emerging Cross-Sectional Technologies | 41 | Expired |
| US5876879A | Oxide layer patterned by vapor phase etching | Electricity | 40 | Expired |
| US6074951A | Vapor phase etching of oxide masked by resist or masking material | Electricity | 39 | Expired |
| US5636320A | Sealed chamber with heating lamps provided within transparent tubes | Mechanical Engineering; Lighting; Heating | 39 | Expired |
| US6071815A | Method of patterning sidewalls of a trench in integrated circuit manufacturing | Electricity | 34 | Expired |
| US5792275A | Film removal by chemical transformation and aerosol clean | Emerging Cross-Sectional Technologies | 22 | Expired |
| US5286331A | Supersonic molecular beam etching of surfaces | Chemistry; Metallurgy | 18 | Expired |
| US6884734B2 | Vapor phase etch trim structure with top etch blocking layer | Electricity | 18 | Expired |
| US6541320B2 | Method to controllably form notched polysilicon gate structures | Electricity | 15 | Expired |
| US5423940A | Supersonic molecular beam etching of surfaces | Chemistry; Metallurgy | 11 | Expired |
| US6518151B1 | Dual layer hard mask for eDRAM gate etch process | Electricity | 9 | Expired |
| US6617085B1 | Wet etch reduction of gate widths | Electricity | 8 | Expired |
| US6429067B1 | Dual mask process for semiconductor devices | Electricity | 8 | Expired |
| US6509219B2 | Fabrication of notched gates by passivating partially etched gate sidewalls and then using an isotropic etch | Electricity | 7 | Expired |
| US6960523B2 | Method of reducing erosion of a nitride gate cap layer during reactive ion etch of nitride liner layer for bit line contact of DRAM device | Electricity | 7 | Expired |
| US6066564A | Indirect endpoint detection by chemical reaction | Electricity | 7 | Expired |
| US6228769A | Endpoint detection by chemical reaction and photoionization | Electricity | 6 | Expired |
| US6294102A | Selective dry etch of a dielectric film | Electricity | 5 | Expired |
| US6890815B2 | Reduced cap layer erosion for borderless contacts | Electricity | 4 | Expired |
| US6180422A | Endpoint detection by chemical reaction | Electricity | 4 | Expired |
| US6656375B1 | Selective nitride: oxide anisotropic etch process | Electricity | 2 | Expired |
| US6054328A | Method for cleaning the surface of a dielectric | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.