Patent · US Expired

Implantation mask for producing a memory cell configuration

US6294294A · kind A · utility

2Cited by

2References

4Claims

0Family size

Assignee

Siemens Aktiengesellschaft · DE

Inventors

Heinz Honigschmid · Starnberg, DE
Georg Braun · Hersbruck, DE

Key dates

Filing date	Oct 25, 1999
Grant date	Sep 25, 2001
Priority date	—
Expiry date	Oct 25, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH10B53/30
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The memory cell configuration is formed with hybrid memory cells. Individual bit line pairs are isolated from one another by a respective bit line from an adjacent bit line pair, so that the memory cells are arranged relative to one another with 1/4 division. This means that intrinsically cohesive implantation mask parts without connection or corner regions can be used, which avoids implantation problems and still permits production of transistors with a different threshold voltage.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.