Integrated circuit with insulating spacers separating borderless contacts from the well
US6294823A · kind A · utility
8Cited by
11References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 1999 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | May 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved integrated circuit and method for making it are described. The integrated circuit includes a shallow trench isolation structure formed adjacent to a well. A borderless contact makes electrical contact to a conductive region formed on the well and an insulating spacer is formed adjacent to a sidewall of the conductive region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.