Annealing process for low-k dielectric film
US6296906A · kind A · utility
5Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02348
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Dielectric films in integrated circuits are annealed in the presence of water to improve their thermal stability and their resistance to damage from ultraviolet radiation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.