Patent · US Expired

Method of electrically connecting IGBT transistor chips mounted on an integrated-circuit wafer

US6297079A · kind A · utility

6Cited by

5References

12Claims

0Family size

Assignee

ALSTOM Holdings · FR

Inventors

Nicolas Changey · Langres, FR
Alain Petitbon · Rambouillet, FR
Sophie Crouzy · Les Ulis, FR
Eric Ranchy · Clamart, FR

Key dates

Filing date	Oct 29, 1999
Grant date	Oct 2, 2001
Priority date	—
Expiry date	Oct 29, 2019

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/14
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

This method of electrically connecting insulated-gate bipolar transistor chips mounted on an integrated-circuit wafer (10), consists in welding the collector, emitter and gate-control electrodes (26, 28) to corresponding connection locations (14, 16) of the chips. At least some of the emitter electrodes (26) are made in a single piece in the form of a plate (20) of electrically conducting material which, on one of its large faces, has protruding parts which define connection pads that are welded to the corresponding connection locations.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.