Method for manufacturing ferroelectric capacitor and method for manufacturing ferroelectric memory
US6297085A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1997 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Dec 11, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
To provide a method that can be used to form a high-qualility ferroelectric film by forming good nuclei when using the sputtering method to manufacture a PZT capacitor or other forroelectric capacitors using Ir or other electrode substances in addition to Pt for the electrode. In the method for manufacturing a PZT ferroelectric capacitor CAP, after titanium film 31 is deposited on Ir electrode 6, lead oxide 32 is deposited at a substrate temperature higher than the crystallization temperature of lead titanate using the sputtering method. Lead zirconate titanate 34 is then deposited at a substrate temperature higher than the aforementioned substrate temperature using the sputtering temperature. Afterwards, a heat treatment of the deposited film is performed to produce PZT film 17.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.