Method for fabricating a high-density semiconductor memory device
US6297090A · kind A · utility
149Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 22, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Feb 22, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/977
Abstract
A method for fabricating a high-density semiconductor memory device which can reduce chip size and increase memory device characteristics. The present invention provides SOI type memory device. The capacitor is embedded in the insulator below the semiconductor wafer and the transistor is formed after the formation of the capacitor. As a result, the degradation of the transistor can be prevented, sufficiently increase the capacitor surface area, and provide fully planarized surface during the processing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.